Accepted abstracts by author > Mazen Fréderic

Thursday 4
Posters session B

› 14:15 - 16:30 (2h15)
› IFMI - Rooms A & B
Low temperature ultra-thin silicon oxide fabricated by plasma immersion ion implantation
Julian Duchaine  1@  , Shay Reboh  2, *@  , Frank Torregrosa  1@  , Fréderic Mazen  2@  , Fréderic Milesi  2@  
1 : Ion Beam Services  (IBS)
Ion Beam Services
2 : Laboratoire d'Electronique et des Technologies de l'Information  (LETI)
CEA
MINATEC 17, rue des Martyrs, 38054, Grenoble Cedex 9 -  France
* : Corresponding author

Here, we report on the fabrication of a low temperature (< 300 °C) surface layer of silicon oxide on Si substrates, using the plasma immersion ion implanter Pulsion®. Before each implant, a chemical solution was used to remove the native silicon oxide. Oxygen implant conditions were optimized in order to obtain a thin oxide layer (< 10 nm) at the wafer surface. We used O2 as gas precursor and a negative voltage of 1 kV to extract ions from the plasma. The implantations were performed with the substrate heated to 100 °C or 300 °C with different plasma conditions. The oxygen concentration profiles were measured by Secondary Ion Mass Spectrometry. To study the chemical composition of the surface layer, we analysed the substrates using X-Ray Photoelectron Spectrometry. In addition, the roughness of the surface was characterized by Atomic Force Microscopy. Our results show that using Pulsion® tool we are able to produce oxide layers having the stoichiometric SiO2 composition already at the as-implanted state. In terms of roughness, the implanted wafers are comparable to pristine substrates.


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